Samsung Considers Adopting MUF Technology for Next-Gen DRAM: Report

March 04, 2024 – According to recent reports from TheElec, Samsung is considering the application of Molded Underfill (MUF) technology in its next-generation DRAM. The company has recently tested an MR MUF process for 3D-stacked (3DS) memory, which showed improved throughput compared to Thermal Compression Non-Conductive Film (TC NCF) but experienced some deterioration in physical…

Read More

Samsung Unveils Industry-First 36GB 12H HBM3E DRAM, Revolutionizing AI and High-Capacity Memory Markets

February 27, 2024 – Samsung Electronics announced today that it has successfully developed the industry’s first 36GB 12H (12-layer stacked) HBM3E DRAM, solidifying its leadership position in the high-capacity HBM market. Utilizing TSV (Through Silicon Via) technology, Samsung achieved the industry’s largest 36GB HBM3E 12H capacity by stacking 24Gb DRAM chips to 12 layers. This…

Read More