September 1, 2023 – In a groundbreaking announcement today, Samsung Electronics unveiled its latest technological feat: the development of a 32Gb DDR5 DRAM module utilizing the advanced 12-nanometer (nm) fabrication process. This achievement not only signifies a leap in memory capacity but also marks a pivotal advancement in the field of semiconductor manufacturing.
SangJoon Hwang, Vice President of the Memory Development Division at Samsung Electronics, highlighted the revolutionary potential of this development. Building upon the foundation of the newly introduced 12nm 32Gb memory, Samsung envisions the creation of memory modules with an astonishing 1TB capacity. This ambitious stride aligns perfectly with the escalating demand for high-capacity DRAM memory in the era of artificial intelligence and big data.
Breaking down the specifics of the 12nm 32Gb DDR5 DRAM, Samsung’s engineering prowess is evident. Through the application of these newly developed 32Gb memory chips, it becomes possible to produce 128GB memory modules without the need for Through Silicon Via (TSV) technology. Moreover, this innovation leads to an approximate 10% reduction in power consumption when compared to a 128GB memory module packaged with 16Gb chips. The eco-friendly edge of this technological breakthrough positions it as the preferred solution for energy-efficient-focused enterprises, especially those operating within data centers.
Samsung’s strategic trajectory extends beyond this remarkable feat. Based on the foundation of the 12nm 32Gb DDR5 DRAM, the company is determined to diversify its array of high-capacity memory products to cater to the sustained growth demands of the high-performance computing and IT sectors. By introducing the 12nm 32Gb memory to data centers and clients engaged in AI and next-generation computing applications, Samsung aims to fortify its position at the vanguard of the next-generation memory market. Additionally, the collaborative efforts with key industry partners will undoubtedly play a pivotal role in shaping the future of this product.
Anticipating a monumental year-end, Samsung plans to commence mass production of the innovative 12nm 32Gb DDR5 DRAM. As the tech landscape continues to evolve, Samsung’s relentless pursuit of groundbreaking memory solutions solidifies its role as a pioneer in shaping the memory technology landscape.
